LA5 MOS-FET is a pure headset amplifier FET Hifi amp A have a fever
Output power (1KHZ sine wave equivalent distortion power):: 300mW/600, 1200mW/32.
Signal to noise ratio: >102dB.
Output impedance: 10 in Europe, 47 in Europe, 120 423 switch.
Voltage amplification gain: 10 times the standard gain mode, high gain mode of 18 times.
Maximum output voltage swing: greater than positive and negative 13V (equivalent to 26V).
Input interface: two RCA audio input, MCU front panel switch.
Output interface: 6.35 headphone output.
Average power consumption: AC220V<20W.
Net weight: 2.8 kg.
Front panel control operation instructions (from left to right)
Power: power switch
InSel: input selection switch is used to select amp two analog input InA, InB
Gain: gain selection switch for selecting amplifier voltage gain
Impedance: output impedance switch for switching the output impedance of the amplifier
Phone: headphone output
Volume: Volume Control